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VHF 28
Half Controlled Single Phase Rectifier Bridge
with Freewheeling Diode
IdAVM = 32 A VRRM = 800-1600 V
VRSM VDSM V 900 1300 1500 1700
VRRM VDRM V 800 1200 1400 1600
Type
6 4
2 1 3 1
2
3 6
4
VHF 28-08io5 VHF 28-12io5 VHF 28-14io5 VHF 28-16io5
8
8
Symbol IdAV IdAVM x IFRMS, ITRMS IFSM, ITSM
Test Conditions TK = 85C, module module per leg TVJ = 45C; VR = 0 V TVJ = TVJM VR = 0 V t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine repetitive, IT = 50 A
Maximum Ratings 28 32 23 300 330 270 300 440 455 365 370 150 A A A A A A A A2s A2s A2s A2s A/ms
Features Package with DCB ceramic base plate Isolation voltage 3600 V~ Planar passivated chips 1/4" fast-on terminals UL registered E 72873
q q q q q
I2t
TVJ = 45C VR = 0 V TVJ = TVJM VR = 0 V
Applications Supply for DC power equipment DC motor control
q q
q q q
(di/dt)cr
TVJ = 125C f =50 Hz, tP =200 ms VD = 2/3 VDRM IG = 0.3 A, diG/dt = 0.3 A/ms
non repetitive, IT = 1/2 * IdAV
500 1000 10
A/ms V/ms
Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling
(dv/dt)cr VRGM PGM PGAVM TVJ TVJM Tstg VISOL Md Weight
TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tp = 30 ms tp = 500 ms tp = 10 ms
Dimensions in mm (1 mm = 0.0394") V W W W W C C C V~ V~ Nm lb.in. g 10 5 1 0.5
-40...+125 125 -40...+125 50/60 Hz, RMS IISOL 1 mA Mounting torque t = 1 min t=1s (M5) (10-32 UNF) 3000 3600 2-2.5 18-22 50
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. x for resistive load IXYS reserves the right to change limits, test conditions and dimensions.
(c) 2000 IXYS All rights reserved
1-3
VHF 28
Symbol IR, ID VT, VF VT0 rT VGT IGT Test Conditions VR = VRRM; VD = VDRM IT, IF = 45 A; TVJ = 25C For power-loss calculations only (TVJ = 125C) VD = 6 V; VD = 6 V; TVJ = 25C TVJ = -40C TVJ = 25C TVJ = -40C TVJ = 125C VD = 2/3 VDRM VD = 2/3 VDRM TVJ = 25C TVJ = -40C TVJ = 125C typ. TVJ = TVJM TVJ = 25C Characteristic Values 5 0.3 1.6 0.9 15 1.0 1.2 65 80 50 0.2 5 150 200 100 100 2 150 75 1.4 0.35 2.0 0.5 12.6 6.3 50 mA mA V V mW V V mA mA mA V mA mA mA mA mA ms ms mC K/W K/W K/W K/W mm mm m/s2
1000 s tgd 100 typ. Limit TVJ = 25C 0.1 1
1
10
1: IGT, TVJ = 125C
V VG
2: IGT, TVJ = 25C 3: IGT, TVJ = -40C
2
3 6 4 5
VGD IGD IL
TVJ = TVJM; TVJ = TVJM; IG = 0.3 A; tG = 30 ms; diG/dt = 0.3 A/ms;
IGD, TVJ = 125C
4: PGAV = 0.5 W 5: PGM = 1 W 6: PGM = 10 W
1
10
100
1000 IG
mA
IH tgd tq Qr RthJC RthJK dS dA a
TVJ = 25C; VD = 6 V; RGK = TVJ = 25C; VD = 1/2 VDRM IG = 0.3 A; diG/dt = 0.3 A/ms TVJ = 125C, IT = 15 A, tP = 300 ms, VR = 100 V di/dt = -10 A/ms, dv/dt = 20 V/ms, VD = 2/3 VDRM per thyristor (diode); DC current per module per thyristor (diode); DC current per module Creepage distance on surface Creepage distance in air Max. allowable acceleration
Fig. 1 Gate trigger range
10
1 10
100 IG
mA 1000
Fig. 2 Gate controlled delay time tgd
(c) 2000 IXYS All rights reserved
2-3
750
VHF 28
Fig. 3 Surge overload current per chip IFSM: Crest value, t: duration
Fig. 4 I2t versus time (1-10 ms) per chip
Fig. 5 Max. forward current at heatsink temperature
Fig. 6 Power dissipation versus direct output current and ambient temperature
Constants for ZthJK calculation: i 1 2 3 Rthi (K/W) 0.3441 1.1554 1.5005 ti (s) 0.0344 0.12 0.5
Fig. 7 Transient thermal impedance junction to heatsink per chip (c) 2000 IXYS All rights reserved
3-3

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